<?xml version="1.0" encoding="utf-8" standalone="yes"?>
<rss version="2.0" xmlns:atom="http://www.w3.org/2005/Atom">
  <channel>
    <title>300mm Wafer on KAD</title>
    <link>https://www.kad8.com/tags/300mm-wafer/</link>
    <description>Recent content in 300mm Wafer on KAD</description>
    <generator>Hugo -- gohugo.io</generator>
    <language>en</language>
    <copyright>© 2026 </copyright>
    <lastBuildDate>Fri, 10 Apr 2026 18:52:44 +0800</lastBuildDate><atom:link href="https://www.kad8.com/tags/300mm-wafer/index.xml" rel="self" type="application/rss+xml" />
    <item>
      <title>Intel’s 19μm GaN Breakthrough on 300mm Wafers</title>
      <link>https://www.kad8.com/hardware/intels-19%CE%BCm-gan-breakthrough-on-300mm-wafers/</link>
      <pubDate>Fri, 10 Apr 2026 18:52:44 +0800</pubDate>
      
      <guid>https://www.kad8.com/hardware/intels-19%CE%BCm-gan-breakthrough-on-300mm-wafers/</guid>
      <description>&lt;blockquote&gt;
&lt;p&gt;Intel’s 19μm GaN Breakthrough on 300mm Wafers&lt;/p&gt;&lt;/blockquote&gt;
&lt;p&gt;Intel Foundry has announced a major milestone in power semiconductor technology: a &lt;strong&gt;Gallium Nitride (GaN)&lt;/strong&gt; device integrated on a &lt;strong&gt;300mm silicon wafer&lt;/strong&gt; with an ultra-thin substrate of just &lt;strong&gt;19 microns (μm)&lt;/strong&gt;.&lt;/p&gt;</description>
      <media:content xmlns:media="http://search.yahoo.com/mrss/" url="https://www.kad8.com/hardware/intels-19%CE%BCm-gan-breakthrough-on-300mm-wafers/featured-Intel_Foundry_GaN-on-silicon.jpeg" />
    </item>
    
  </channel>
</rss>
