🚀 Micron Ships Industry-Leading 11 Gbps HBM4 #
Micron Technology has delivered samples of the fastest 11 Gbps HBM4 DRAM to key partners and TSMC for next-gen HBM4E memory solutions. The high-bandwidth DRAM achieves over 2.8 TB/s bandwidth, solidifying Micron’s leadership in memory performance.
CEO Sanjay Mehrotra highlights that these modules combine 1-gamma DRAM, in-house advanced CMOS base dies, and innovative packaging to deliver top-tier performance and power efficiency.
🤝 Strategic Collaboration on HBM4E #
For HBM4E, Micron will partner with TSMC to produce the foundational logic chips for both standard and custom variants. Production is expected to start in 2027, offering higher margins on custom logic dies and expanding Micron’s footprint in AI and high-performance computing.
💾 Advancements in LPDDR and GDDR7 #
Micron continues to lead in other memory sectors:
- LPDDR for Servers: Sole supplier for NVIDIA GB-based data center systems
- GDDR7: Pin speeds set to exceed 40 Gbps, targeting AI and client GPUs, with NVIDIA as the primary partner
🔬 Manufacturing Node Progress #
Micron reports rapid progress:
- 1γ DRAM Node: Volume production 50% faster than prior generation
- G9 NAND: Yield improvements for TLC/QLC flash
- PCIe Gen 6 SSD: Expanding offerings for data centers with 16Gb 1γ DRAM
Micron’s latest HBM4 and HBM4E innovations underscore the company’s commitment to high-performance, power-efficient memory for the AI and data center markets.